Farad

microfaradFpFpicofaradfaradsnFμFFemtofaradAttofaradExafarad
The farad (symbol: F) is the SI derived unit of electrical capacitance, the ability of a body to store an electrical charge.wikipedia
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Michael Faraday

FaradayFaraday, MichaelM. Faraday
It is named after the English physicist Michael Faraday. The term "farad" was originally coined by Latimer Clark and Charles Bright in 1861, in honor of Michael Faraday, for a unit of quantity of charge, but by 1873, the farad had become a unit of capacitance.
The SI unit of capacitance is named in his honour: the farad.

Coulomb

CPicoCoulomBExacoulomb
One farad is defined as the capacitance across which, when charged with one coulomb, there is a potential difference of one volt.
Thus, it is also the amount of excess charge on a capacitor of one farad charged to a potential difference of one volt:

Capacitor

capacitorscapacitivecondenser
For example, if the potential difference across a capacitor is halved, the quantity of charge stored by that capacitor will also be halved. A capacitor generally consists of two conducting surfaces, frequently referred to as plates, separated by an insulating layer usually referred to as a dielectric.
The earliest unit of capacitance was the jar, equivalent to about 1.11 nanofarads.

SI derived unit

derived unitderived unitsJ/kg
The farad (symbol: F) is the SI derived unit of electrical capacitance, the ability of a body to store an electrical charge.

Kilogram

kgmgmilligram
s⋅A⋅m⋅kg
Three other base units (cd, A, mol) and 17 derived units (N, Pa, J, W, C, V, F, Ω, S, Wb, T, H, kat, Gy, Sv, lm, lx) in the SI system were defined in relation to the kilogram, and thus its stability was important.

Supercapacitor

supercapacitorsultracapacitorelectric double-layer capacitor
The size of commercially available capacitors ranges from around 0.1 pF to (5 kF) supercapacitors.
This design gave a capacitor with a capacitance on the order of one farad, significantly higher than electrolytic capacitors of the same dimensions.

Elastance

darafelectrical elastance
The reciprocal of capacitance is called electrical elastance, the (non-standard, non-SI) unit of which is the daraf.
The SI unit of elastance is the inverse farad (F −1 ).

Capacitance

capacitiveself-capacitanceelectrical capacitance
One farad is defined as the capacitance across which, when charged with one coulomb, there is a potential difference of one volt. The farad (symbol: F) is the SI derived unit of electrical capacitance, the ability of a body to store an electrical charge.
The SI unit of capacitance is the farad (symbol: F), named after the English physicist Michael Faraday.

Leyden jar

Leyden jarsLeiden jarelectric cell
The original capacitor was the Leyden jar developed in the 18th century.
A typical Leyden jar of one pint size has a capacitance of about 1 nF.

Centimetre–gram–second system of units

CGScgs unitsCGS unit
The abfarad (abbreviated abF) is an obsolete [[centimetre–gram–second system of units#Electromagnetic units in various CGS systems|CGS unit of capacitance]] equal to farads (1 gigafarad, GF).
As well as the volt and amp, the farad (capacitance), ohm (resistance), coulomb (electric charge), and henry are consequently also used in the practical system and are the same as the SI units.

Metric prefix

SI prefixunit prefixprefix
Most electrical and electronic applications are covered by the following SI prefixes:
Double prefixes have been used in the past, such as micromillimetres or "millimicrons" (now nanometres), micromicrofarads (now picofarads), kilomegatons (now gigatons), hectokilometres (now 100 kilometres) and the derived adjective hectokilometric (typically used for qualifying the fuel consumption measures).

Electric charge

chargeelectrical chargecharged
One farad is defined as the capacitance across which, when charged with one coulomb, there is a potential difference of one volt.

Volt

VkVvolts
One farad is defined as the capacitance across which, when charged with one coulomb, there is a potential difference of one volt. Modern capacitors are constructed using a range of manufacturing techniques and materials to provide the extraordinarily wide range of capacitance values used in electronics applications from femtofarads to farads, with maximum-voltage ratings ranging from a few volts to several kilovolts.

Hertz

MHzkHzHz
where F = farad, A = ampere, V = volt, C = coulomb, J = joule, m = metre, N = newton, s = second, W = watt, kg = kilogram, Ω = ohm, Hz = hertz, H = henry.

Josiah Latimer Clark

Latimer Clark
The term "farad" was originally coined by Latimer Clark and Charles Bright in 1861, in honor of Michael Faraday, for a unit of quantity of charge, but by 1873, the farad had become a unit of capacitance.

Charles Tilston Bright

Charles BrightBright, Charles TilstonBright
The term "farad" was originally coined by Latimer Clark and Charles Bright in 1861, in honor of Michael Faraday, for a unit of quantity of charge, but by 1873, the farad had become a unit of capacitance.

Dielectric

dielectricsdielectric relaxationpolarization
A capacitor generally consists of two conducting surfaces, frequently referred to as plates, separated by an insulating layer usually referred to as a dielectric.

Electronics

electronicelectronic equipmentelectronic device
Modern capacitors are constructed using a range of manufacturing techniques and materials to provide the extraordinarily wide range of capacitance values used in electronics applications from femtofarads to farads, with maximum-voltage ratings ranging from a few volts to several kilovolts.

Parasitic capacitance

parasiticcapacitanceinline capacitor
Parasitic capacitance in high-performance integrated circuits can be measured in femtofarads (1 fF = 0.001 pF = F), while high-performance test equipment can detect changes in capacitance on the order of tens of attofarads (1 aF = F). A value of 0.1 pF is about the smallest available in capacitors for general use in electronic design, since smaller ones would be dominated by the parasitic capacitances of other components, wiring or printed circuit boards.

Integrated circuit

integrated circuitsmicrochipchip
Parasitic capacitance in high-performance integrated circuits can be measured in femtofarads (1 fF = 0.001 pF = F), while high-performance test equipment can detect changes in capacitance on the order of tens of attofarads (1 aF = F).

Printed circuit board

circuit boardPCBprinted circuit boards
A value of 0.1 pF is about the smallest available in capacitors for general use in electronic design, since smaller ones would be dominated by the parasitic capacitances of other components, wiring or printed circuit boards.